Enhancement of sp(3)-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy.

نویسندگان

  • S C Ray
  • C W Pao
  • H M Tsai
  • J W Chiou
  • W F Pong
  • M-H Tsai
  • T I T Okpalugo
  • P Papakonstantinou
  • T W Pi
چکیده

X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VB-PES) were used to elucidate the electronic and mechanical properties of diamond-like carbon (DLC) thin films deposited by the plasma-enhanced chemical vapour deposition method at various bias voltages (V(b)) using a C(2)H(2) vapour precursor in an Ar(+) atmosphere. The increase of V(b) is found to increase and decrease the contents of sp(3)- and sp(2)-bonded carbon atoms, respectively, i.e. the films become more diamond-like. The Young's modulus measurements show increases with the increase of the presence of sp(3)-bonded carbon atoms in the structure of the DLC films.

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عنوان ژورنال:
  • Journal of physics. Condensed matter : an Institute of Physics journal

دوره 19 17  شماره 

صفحات  -

تاریخ انتشار 2007